作者：Lanzhong Hao, Qingzhong Xue （*）, Xili Gao, Qun Li, Qingbin Zheng, and Keyou Yan
关键字：Fe-doped amorphous carbon/silicon junction
论文来源：期刊
具体来源：JOURNAL OF APPLIED PHYSICS 101, 053718， （2007）
发表时间：2007年

Simple p-C/n-Si junctions have been fabricated by magnetron sputtering at room temperature and their current-voltage （I-V） characteristics have been investigated. The p-n junctions show good rectifying properties in a large voltage scope and interesting I-V characteristics. The most interesting
phenomenon observed in these p-n junctions is that the temperature dependence of some junction resistance shows a metal-insulator transition whose transition temperature is hugely modulated from 162 to 236 K by a bias voltage increasing from 20 to 40 V. This work shows that amorphous carbon films combined with other semiconductor materials can result in some interesting properties that may have potential applications.